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Si3909DV
Vishay Siliconix
Dual P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
- 20
R DS(on) ( Ω )
0.200 at V GS = - 4.5 V
0.235 at V GS = - 3.6 V
0.340 at V GS = - 2.5 V
I D (A)
± 1.8
± 1.6
± 1.3
? Halogen-free According to IEC 61249-2-21
Definition
? TrenchFET ? Power MOSFETs: 2.5 V Rated
? Compliant to RoHS Directive 2002/95/EC
TSOP-6
Top View
S 1
S 2
G1
1
6
D1
3 mm
S2
2
5
S1
G 1
G 2
G2
3
4
D2
2.85 mm
Ordering Information: Si3909DV-T1-E3 (Lead (Pb)-free)
D 1
D 2
Si3909DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
Limit
- 20
± 12
Unit
V
Continuous Drain Current (T J = 150 °C) a, b
Pulsed Drain Current
Continuous Diode Current (Diode Conduction) a, b
Maximum Power Dissipation a, b
Operating Junction and Storage Temperature Range
T A = 25 °C
T A = 70 °C
T A = 25 °C
T A = 70 °C
I D
I DM
I S
P D
T J , T stg
± 1.8
± 1.2
±7
- 1.05
1.15
0.73
- 55 to 150
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a
Maximum Junction-to-Lead
t ≤ 5s
Steady State
Steady State
R thJA
R thJL
93
130
75
110
150
90
°C/W
Notes:
a. Surface Mounted on FR4 board.
b. t ≤ 5 s.
Document Number: 70968
S09-2276-Rev. B, 02-Nov-09
www.vishay.com
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